Semiconductor device

ABSTRACT

A semiconductor device includes a plurality of unit transistors that are arranged on a surface of a substrate in a first direction. Input capacitive elements are arranged so as to correspond to the unit transistors. An emitter common wiring line is connected to emitter layers of the unit transistors. A via-hole extending from the emitter common wiring line to a back surface of the substrate is disposed at a position overlapping the emitter common wiring line. A collector common wiring line is connected to collector layers of the unit transistors. The input capacitive elements, the emitter common wiring line, the unit transistors, and the collector common wiring line are arranged in this order in a second direction. Base wiring lines that connect the input capacitive elements to base layers of the corresponding unit transistors intersect the emitter common wiring line without physical contact.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims benefit of priority to Japanese PatentApplication No. 2018-002030, filed Jan. 10, 2018, the entire content ofwhich is incorporated herein by reference.

BACKGROUND Technical Field

The present disclosure relates to a semiconductor device.

Background Art

With the advance of smartphones, an improvement in the communicationspeed of mobile communication systems has been desired. A technologycalled carrier aggregation in which carriers of a plurality of bands arebound together has been introduced as a technology for improving thecommunication speed. In the case where the carrier aggregation isapplied to global terminals used in a plurality of countries or regions,a front end including, for example, a power amplifier, a filter, and aswitch for radio frequencies of mobile terminals has a complexconfiguration, resulting in an increase in a loss in a front-endportion. In order to obtain a sufficient transmission power required forthe mobile terminals, the output power required for a power amplifierthat amplifies transmission signals has been increasing.

In addition, with an increase in the frequency used in mobilecommunication systems, a coverage area provided by one base station hasbeen decreasing. High power user equipment (HPUE), which is a mobileterminal whose output power is increased, has been desired so that awide coverage area is provided by a single base station. In order tokeep pace with HPUE, power amplifiers of mobile terminals are requiredto output larger electric power.

Japanese Unexamined Patent Application Publication No. 2012-109320discloses a power amplifier that uniformly operates a plurality oftransistors to realize a low power consumption and good distortioncharacteristics. The power amplifier disclosed in Japanese UnexaminedPatent Application Publication No. 2012-109320 includes a matchingcapacitor to which a radio-frequency signal is input and a transistorrow in which a plurality of transistors are arranged in a predetermineddirection. The matching capacitor includes an upper-layer electrode anda lower-layer electrode. The transistor row amplifies theradio-frequency signal output from the lower-layer electrode of thematching capacitor.

In a region adjacent to the transistor row, a grounded via-hole that isconnected to emitters is formed at a distance substantially equal fromboth ends of the transistor row. The lower-layer electrode of thematching capacitor is a microstrip line that is disposed so that aradio-frequency signal is uniformly distributed with the via-holetherebetween. The lower-layer electrode is connected to base terminalsof the plurality of transistors.

SUMMARY

In the power amplifier disclosed in Japanese Unexamined PatentApplication Publication No. 2012-109320, the lower-layer electrode ofthe matching capacitor is arranged in a direction in which the pluralityof transistors are arranged so that the via-hole is arranged between thelower-layer electrode and the transistor row. Via-holes cannot bearranged in this region where the lower-layer electrode is arranged.Therefore, the number of via-holes is limited. Transistors that aredistant from the via-hole have high emitter resistances, and it isdifficult to improve characteristics such as gains.

Accordingly, the present disclosure provides a semiconductor devicecapable of reducing the emitter resistance without increasing thecollector resistance and having a configuration suitable for high-outputoperation.

A semiconductor device according to a first aspect of the presentdisclosure includes a plurality of unit transistors that are arranged ona first surface of a substrate in a first direction and that eachinclude a base layer, an emitter layer, and a collector layer; inputcapacitive elements arranged so as to correspond to the unit transistorsand connected to the base layers of the corresponding unit transistors;an emitter common wiring line connected to the emitter layers of theunit transistors; a via-hole that is disposed at a position overlappingthe emitter common wiring line and that extends from the emitter commonwiring line to a second surface of the substrate, the second surfacebeing opposite to the first surface; and a collector common wiring lineconnected to the collector layers of the unit transistors. In thesemiconductor device, an input capacitor region in which the inputcapacitive elements are arranged, the emitter common wiring line, atransistor region in which the unit transistors are arranged, and thecollector common wiring line are arranged in this order in a seconddirection intersecting the first direction, and base wiring lines thatconnect the input capacitive elements to the base layers of thecorresponding unit transistors intersect the emitter common wiring linewithout physical contact.

The input capacitive elements do not affect the arrangement of thevia-hole. Therefore, the distance from the via-hole to the unittransistors can be shortened. As a result, the emitter resistance can bereduced without increasing the collector resistance. Thus, a decrease inthe output power can be suppressed to realize an improvement in thegain.

Other features, elements, characteristics and advantages of the presentdisclosure will become more apparent from the following detaileddescription of preferred embodiments of the present disclosure withreference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram illustrating a planar arrangement of asemiconductor device according to a first embodiment;

FIG. 2 is a plan view of a semiconductor device according to the firstembodiment;

FIG. 3A is a sectional view taken along dash-dotted line 3A-3A in FIG.2;

FIG. 3B is a sectional view taken along dash-dotted line 3B-3B in FIG.2;

FIG. 4 is a plan view of a semiconductor device according to a secondembodiment;

FIG. 5A is a sectional view taken along dash-dotted line 5A-5A in FIG.4;

FIG. 5B is a sectional view taken along dash-dotted line 5B-5B in FIG.4; and

FIG. 6 is a plan view of a semiconductor device according to acomparative example.

DETAILED DESCRIPTION First Embodiment

A semiconductor device according to a first embodiment will be describedwith reference to FIGS. 1 to 3B. FIG. 1 is a schematic diagramillustrating a planar arrangement of a semiconductor device according tothe first embodiment. The semiconductor device according to the firstembodiment includes a substrate made of a semiconductor, and a pluralityof active elements, a plurality of passive elements, and a plurality ofwiring lines are formed on the substrate. An xyz orthogonal coordinatesystem is defined in which a first surface the substrate is defined asan xy plane and a normal direction of the first surface is defined as apositive direction of a z-axis.

A plurality of unit transistors 20 each including a base layer, anemitter layer, and a collector layer are arranged on the first surfaceof the substrate in a y-axis direction. Input capacitive elements 30 arearranged so as to correspond to the plurality of unit transistors 20.The plurality of input capacitive elements 30 are also arranged in they-axis direction and connected to the base layers of the correspondingunit transistors 20.

The emitter layers and the collector layers of the unit transistors 20are connected to an emitter common wiring line 11 and a collector commonwiring line 13, respectively. A plurality of via-holes 40 are arrangedat positions overlapping the emitter common wiring line 11. Each of thevia-holes 40 extends from the emitter common wiring line 11 to a secondsurface of the substrate, the second surface being opposite to the firstsurface. A ground plane is disposed on the second surface of thesubstrate. The emitter common wiring line 11 is connected through thevia-holes 40 to the ground plane formed on the second surface of thesubstrate.

As illustrated in FIG. 1, an input capacitor region 10 in which theplurality of input capacitive elements 30 are arranged, the emittercommon wiring line 11, a transistor region 12 in which the plurality ofunit transistors 20 are arranged, and the collector common wiring line13 are arranged in this order in an x-axis direction.

One of electrodes of each of the input capacitive elements 30 isconnected to the base layer of the corresponding unit transistor 20 witha base wiring line 23B interposed therebetween. The base wiring lines23B intersect the emitter common wiring line 11 without physical contactwith the emitter common wiring line 11. The base wiring lines 23Bintersect the emitter common wiring line 11 without being electricallyshort-circuited to the emitter common wiring line 11. The otherelectrode of each of the input capacitive elements 30 is connected to acommon input signal wiring line 33. A radio-frequency input signal issupplied to the base layers of the unit transistors 20 through the inputsignal wiring line 33, the input capacitive elements 30, and the basewiring lines 23B.

The electrode of each of the input capacitive elements 30, the electrodebeing connected to the corresponding unit transistor 20, is connected toa common bias wiring line 34 with a resistive element 32 interposedtherebetween. A bias current or a bias voltage is supplied to the baselayers of the unit transistors 20 through the bias wiring line 34 andthe resistive elements 32.

As described above, the semiconductor device according to the firstembodiment includes a plurality of unit transistors 20 that areconnected together in parallel and is used as, for example, the outputstage of a power amplifier.

FIG. 2 is a plan view of a semiconductor device according to the firstembodiment. An input capacitor region 10, an emitter common wiring line11, a transistor region 12, and a collector common wiring line 13 arearranged in this order in the x-axis direction.

In the transistor region 12, a plurality of active regions 21 arearranged in the y-axis direction. A unit transistor 20 (FIG. 1) isarranged in each of the plurality of active regions 21. The unittransistor 20 is, for example, a heterojunction bipolar transistorincluding a collector layer, a base layer, and an emitter layer.

At least two metal wiring layers are disposed on a substrate. Acollector wiring line 22C, a base wiring line 22B, and an emitter wiringline 22E that are included in a first-layer wiring layer are arranged ineach of the active regions 21. The collector wiring line 22C and theemitter wiring line 22E are each formed by a pair of conductor patterns.The first-layer base wiring line 22B is arranged on the side close tothe emitter common wiring line 11 (on the left side in FIG. 2) in theactive region 21. A base electrode that is ohmically connected to thebase layer is disposed under the first-layer base wiring line 22B. Thebase electrode extends from a region overlapping the first-layer basewiring line 22B toward the side opposite to the emitter common wiringline 11 (the right side in FIG. 2) in parallel to the x-axis.

The pair of conductor patterns of the first-layer emitter wiring line22E are arranged adjacent to the base electrode, which is long in thex-axis direction (on the upper side and the lower side in FIG. 2). Eachof the conductor patterns that form the emitter wiring line 22E also hasa planar shape that is long in the x-axis direction. Emitter electrodesthat are ohmically connected to the emitter layers are disposed underthe pair of conductor patterns of the first-layer emitter wiring line22E.

The pair of conductor patterns of the first-layer collector wiring line22C are arranged adjacent to the first-layer emitter wiring line 22E (onthe upper side and the lower side in FIG. 2). Collector electrodes thatare ohmically connected to the collector layers are disposed under thefirst-layer collector wiring line 22C.

The collector common wiring line 13 included in a second-layer wiringlayer is arranged on one side of the transistor region 12 (the rightside in FIG. 2). The collector common wiring line 13 overlaps portionsof the first-layer collector wiring lines 22C of the unit transistors 20and is connected to the first-layer collector wiring lines 22C throughinterlayer connection vias provided in the overlapping portions. Anopening is provided in a protective film that covers the collectorcommon wiring line 13 to expose a portion of the collector common wiringline 13. This exposed portion functions as a pad 60 for collectors, thepad 60 being used for connecting to an external circuit.

A second-layer emitter wiring line 23E is arranged so as to overlap thefirst-layer emitter wiring lines 22E. The second-layer emitter wiringline 23E is connected to the first-layer emitter wiring lines 22Ethrough interlayer connection vias provided in portions in which thesecond-layer emitter wiring line 23E overlaps the first-layer emitterwiring lines 22E.

The second-layer emitter wiring line 23E include a portion that extendsfrom one of conductor patterns that form the first-layer emitter wiringline 22E of each of the unit transistors 20, that passes above the baseelectrode, and that reaches the other conductor pattern. Furthermore,the second-layer emitter wiring line 23E has a portion extending overthe plurality of active regions 21 in the y-axis direction and connectsthe emitter electrodes of the plurality of unit transistors 20 together.The portion of the second-layer emitter wiring line 23E extending in they-axis direction partially overlaps the first-layer collector wiringlines 22C.

The second-layer emitter wiring line 23E includes a plurality ofcomb-tooth portions that extend from the portion extending in the y-axisdirection toward the emitter common wiring line 11 in a comb-toothshape. Leading ends of the comb-tooth portions of the second-layeremitter wiring line 23E overlap the emitter common wiring line 11 andare connected to the emitter common wiring line 11 through interlayerconnection vias provided in the overlapping portions.

A plurality of via-holes 40 are formed so as to overlap the emittercommon wiring line 11. The via-holes 40 are arranged, for example, inthe direction in which the emitter common wiring line 11 extends (they-axis direction). For example, one via-hole 40 is formed for two unittransistors 20, and the via-hole 40 is arranged at the center betweenthe two unit transistors 20 with respect to the y-axis direction.

A plurality of input capacitive elements 30 are arranged in the inputcapacitor region 10 on the side opposite to the transistor region 12 asviewed from the emitter common wiring line 11. The input capacitiveelements 30 each include a lower-layer electrode 30L included in thefirst-layer wiring layer, an upper-layer electrode 30U included in thesecond-layer wiring layer, and an insulator film disposed between thelower-layer electrode 30L and the upper-layer electrode 30U.

A plurality of base wiring lines 23B included in the second-layer wiringlayer intersect the emitter common wiring line 11. One end of each ofthe second-layer base wiring lines 23B overlaps a portion of thecorresponding lower-layer electrode 30L and is connected to thelower-layer electrode 30L through an interlayer connection via providedin the overlapping portion. The other end of each of the second-layerbase wiring lines 23B overlaps the first-layer base wiring line 22B andis connected to the first-layer base wiring line 22B through aninterlayer connection via provided in the overlapping portion.

The comb-tooth portions of the second-layer emitter wiring line 23E arearranged so as to avoid the second-layer base wiring lines 23B. Forexample, the comb-tooth portions of the second-layer emitter wiring line23E and the second-layer base wiring lines 23B are alternately arrangedin the y-axis direction.

The second-layer base wiring lines 23B are arranged on an extension ofregions of the second-layer emitter wiring line 23E extending in thex-axis direction, the regions overlapping the first-layer emitter wiringlines 22E. Therefore, the second-layer emitter wiring line 23E cannot belinearly extended from the regions overlapping the first-layer emitterwiring lines 22E toward the emitter common wiring line 11.

The second-layer emitter wiring line 23E extends from the portionsoverlapping the first-layer emitter wiring lines 22E, passes above thefirst-layer collector wiring lines 22C so as to avoid the second-layerbase wiring lines 23B in the y-axis direction, and is continuous withthe comb-tooth portions. The linear distance from a unit transistor 20to the corresponding via-hole 40 is uniform in the plurality of unittransistors 20, and the wiring-line length of the second-layer emitterwiring line 23E is also uniform.

Each of the lower-layer electrodes 30L of the input capacitive elements30 is connected to the common bias wiring line 34 with the correspondingresistive element 32 interposed therebetween, the common bias wiringline 34 and the resistive element 32 being included in the first-layerwiring layer. The lower-layer electrodes 30L and the resistive elements32 are arranged in the same first-layer wiring layer, and no interlayerinsulating films are disposed between the lower-layer electrodes 30L andthe corresponding resistive elements 32. The upper-layer electrodes 30Uof the input capacitive elements 30 are continuous with the input signalwiring line 33 included in the second-layer wiring layer.

FIG. 3A is a sectional view taken along dash-dotted line 3A-3A in FIG.2, and FIG. 3B is a sectional view taken along dash-dotted line 3B-3B inFIG. 2. An n-type sub-collector layer 51 is epitaxially grown on asubstrate 50 made of a semi-insulating compound semiconductor, forexample, GaAs. A part of the sub-collector layer 51 other than an activeregion 21 in which a unit transistor 20 is arranged is insulated by ionimplantation.

A collector layer 52 and a base layer 53 are stacked on a partial regionof the active region 21. A base electrode 55B is disposed on the baselayer 53, and an emitter layer 54 (FIG. 3B) is arranged on both sides ofthe base electrode 55B. The collector layer 52, the base layer 53, andthe emitter layer 54 form a heterojunction bipolar transistor.

Collector electrodes 55C (FIG. 3B) are disposed on the active region 21on both sides of the collector layer 52. Emitter electrodes 55E (FIG.3B) are disposed on the emitter layer 54. The collector electrodes 55Care ohmically connected to the collector layer 52 through the activeregion 21 of the sub-collector layer 51. The base electrode 55B and theemitter electrodes 55E are ohmically connected to the base layer 53 andthe emitter layer 54, respectively.

A base wiring line 22B (FIG. 3A), an emitter wiring line 22E (FIG. 3B),a collector wiring line 22C (FIG. 3B), an emitter common wiring line 11(FIG. 3A), a lower-layer electrode 30L (FIG. 3A) of an input capacitiveelement 30, a resistive element 32 (FIG. 3A), and a bias wiring line 34(FIG. 3A) are arranged in a first-layer wiring layer. The base wiringline 22B is connected to an end portion of the base electrode 55B (theleft end in FIG. 3A). The emitter common wiring line 11 is connected,through a via-hole 40, to a ground plane 57 disposed on a back surfaceof the substrate 50. The lower-layer electrode 30L of the inputcapacitive element 30 is connected to the bias wiring line 34 with theresistive element 32 interposed therebetween.

The first-layer collector wiring line 22C is connected to the collectorelectrodes 55C. The first-layer emitter wiring line 22E (FIG. 3B) isconnected to the emitter electrodes 55E.

A base wiring line 23B (FIG. 3A), an emitter wiring line 23E (FIG. 3B),a collector common wiring line 13 (FIG. 3A), an upper-layer electrode30U (FIG. 3A) of the input capacitive element 30, and an input signalwiring line 33 (FIG. 3A) are arranged in a second-layer wiring layer. Atan intersection of the second-layer base wiring line 23B and thefirst-layer emitter common wiring line 11, an interlayer insulating filmis disposed between the base wiring line 23B and the emitter commonwiring line 11 to insulate these wiring lines from each other. Thesecond-layer base wiring line 23B passes above the emitter common wiringline 11 and connects the lower-layer electrode 30L to the first-layerbase wiring line 22B. The second-layer emitter wiring line 23E passesabove the base electrode 55B and connects a pair of conductor patternsof the first-layer emitter wiring line 22E to each other.

Next, advantageous effects obtained as a result of adopting theconfiguration of the semiconductor device according to the firstembodiment will be described.

When the input capacitive elements 30 and the emitter common wiring line11 are arranged at substantially the same positions with respect to thex-axis direction in order to made the input capacitive elements 30 closeto the unit transistors 20, the via-holes 40 must be arranged so as toavoid the input capacitive elements 30. Therefore, emitter wiring-linelengths from the unit transistors 20 to the via-holes 40 vary widely.Unit transistors 20 having long emitter wiring-line lengths to via-holes40 have high emitter resistances. Consequently, characteristics, such asgains, of the transistors may decrease.

In the first embodiment, the emitter common wiring line 11 is arrangedbetween the input capacitor region 10 (FIGS. 1 and 2) and the transistorregion 12 with respect to the x-axis direction. Therefore, the via-holes40 can be arranged so as to overlap the emitter common wiring line 11without being restricted by the arrangement of the input capacitiveelements 30 (FIG. 2). For example, one via-hole 40 is arranged for twounit transistors 20, so that the length of the emitter wiring line fromthe unit transistors 20 to the via-hole 40 can be made short anduniform. As a result, an increase in the emitter resistance can besuppressed, and a decrease in characteristics such as gains can besuppressed.

Even when the emitter common wiring line 11 is arranged between theinput capacitive elements 30 and the unit transistors 20, the inputcapacitive elements 30 can be connected to the corresponding baseelectrodes 55B (FIG. 3B) of the unit transistors 20 by using thesecond-layer base wiring lines 23B disposed above the emitter commonwiring line 11. By arranging the emitter common wiring line 11 as alayer located below the second-layer base wiring lines 23B, thesecond-layer base wiring lines 23B and the via-holes 40 can be arrangedso as to overlap each other in plan view.

When the input capacitive elements 30 are connected to the correspondingbase electrodes 55B with the second-layer base wiring lines 23Binterposed therebetween, it is difficult to linearly extend thesecond-layer emitter wiring line 23E (FIG. 2) from regions where thesecond-layer emitter wiring line 23E overlaps the first-layer emitterwiring lines 22E toward the emitter common wiring line 11. In the firstembodiment, the second-layer emitter wiring line 23E extends in they-axis direction from regions where the second-layer emitter wiring line23E overlaps the first-layer emitter wiring lines 22E, passes above thefirst-layer collector wiring lines 22C, and further extends toward theemitter common wiring line 11. By adopting this planar shape, theemitter electrodes 55E (FIG. 3B) can be connected to the emitter commonwiring line 11.

In the first embodiment, the lower-layer electrode 30L (FIG. 2) of aninput capacitive element 30 connected to the base layer 53 of a unittransistor 20 is arranged for each unit transistor 20. Thus, theresistive element 32 (FIG. 2) functioning as a ballast resistor can bearranged for each unit transistor 20.

Next, advantageous effects obtained by adopting the configuration of thesemiconductor device according to the first embodiment will be describedin comparison with the semiconductor device according to a comparativeexample illustrated in FIG. 6.

FIG. 6 is a plan view of a semiconductor device according to acomparative example. In the first embodiment (FIG. 2), the emittercommon wiring line 11 is arranged between the input capacitor region 10and the transistor region 12. In contrast, in the comparative example,an input capacitor region 10 is arranged on one side (the left side inFIG. 6) of a transistor region 12, and an emitter common wiring line 11is arranged on the other side (the right side in FIG. 6) of thetransistor region 12. With this configuration, lower-layer electrodes30L of input capacitive elements 30 can be directly connected to baseelectrodes 55B without a second-layer wiring layer interposedtherebetween. Furthermore, the emitter common wiring line 11 can bedirectly connected to emitter electrodes 55E (FIG. 3B) without asecond-layer wiring layer interposed therebetween.

A collector common wiring line 13 provided in a second-layer wiringlayer can be arranged so as to overlap the emitter common wiring line 11provided in first-layer wiring layer. However, overlapping via-holes 40and pads 60 for collectors is not preferred from the viewpoint of theproduction process. Therefore, the pads 60 for collectors must bearranged at distant positions, as viewed from the unit transistors 20,so as to avoid a region where the via-holes 40 are arranged in they-axis direction. Accordingly, the wiring-line length from collectorelectrodes 55C (FIG. 3B) to the pads 60 for collectors is increased. Asa result, the output power of the transistors decreases.

In the first embodiment (FIG. 2), since neither the emitter commonwiring line 11 nor the via-holes 40 are arranged between the transistorregion 12 and the collector common wiring line 13, the collectorelectrodes 55C (FIG. 3B) and the pad 60 for collectors can be made closeto each other. As a result, the decrease in the output power of thetransistors can be suppressed.

Second Embodiment

Next, a semiconductor device according to a second embodiment will bedescribed with reference to FIGS. 4, 5A, and 5B. Hereinafter,descriptions of configurations that are common to those of thesemiconductor device according to the first embodiment will be omitted.

FIG. 4 is a plan view of a semiconductor device according to the secondembodiment. FIG. 5A is a sectional view taken along dash-dotted line5A-5A in FIG. 4, and FIG. 5B is a sectional view taken along dash-dottedline 5B-5B in FIG. 4. In the first embodiment (FIG. 2), the first-layerbase wiring line 22B (FIG. 3A) is arranged at an end portion of the baseelectrode 55B on the side close to the emitter common wiring line 11. Inthe second embodiment, a first-layer base wiring line 22B (FIGS. 4 and5A) is arranged at an end portion of a base electrode 55B (FIG. 5A) onthe side opposite to an emitter common wiring line 11.

A second-layer base wiring line 23B (FIG. 5A) passes above the emittercommon wiring line 11, further passes above the base electrode 55B and afirst-layer emitter wiring line 22E, and is connected to the first-layerbase wiring line 22B. The first-layer base wiring line 22B is notarranged in a region extending from a central portion of the baseelectrode 55B to the emitter common wiring line 11. Each of thefirst-layer emitter wiring lines 22E extends from the emitter commonwiring line 11 (FIGS. 4 and 5A) to a region where the first-layeremitter wiring line 22E overlaps the corresponding base electrode 55Band emitter electrodes 55E (FIG. 5B). The emitter common wiring line 11and the first-layer emitter wiring lines 22E are formed by a singleconductor pattern.

Next, advantageous effects obtained as a result of adopting theconfiguration of the semiconductor device according to the secondembodiment will be described.

In the second embodiment, via-holes 40 can be arranged without beingaffected by the arrangement of input capacitive elements 30 as in thefirst embodiment. Furthermore, in the second embodiment, each of thefirst-layer emitter wiring lines 22E can linearly connects the regionwhere the emitter wiring line 22E overlaps the emitter electrodes 55E(FIG. 5B) to the emitter common wiring line 11 at the shortest distance.Therefore, the inductance and the resistance of a wiring line from aground plane 57 (FIGS. 5A and 5B) to the emitter electrodes 55E througha via-hole 40 can be reduced. In addition, since neither the emittercommon wiring line 11 nor the via-holes 40 are arranged between atransistor region 12 and a collector common wiring line 13, collectorelectrodes 55C and a pad 60 for collectors can be made close to eachother. Accordingly, parasitic resistance components inserted into thecollectors can be reduced, and a decrease in the output power of thetransistors can be suppressed. As a result, characteristics of the poweramplifier can be improved.

The embodiments described above are exemplary, and, needless to say, apartial replacement or combination of configurations described indifferent embodiments is possible. The same or similar advantageouseffects achieved by the same or similar configurations in a plurality ofembodiments will not be mentioned in each of the embodiments.Furthermore, the present disclosure is not limited to the embodimentsdescribed above. For example, it is obvious for those skilled in the artthat various modifications, improvements, combinations, and the like canbe made.

Disclosures of semiconductor devices according to a first aspect to asixth aspect are derived on the basis of the embodiments describedabove.

A semiconductor device according to the first aspect includes aplurality of unit transistors that are arranged on a first surface of asubstrate in a first direction and that each include a base layer, anemitter layer, and a collector layer; input capacitive elements arrangedso as to correspond to the unit transistors and connected to the baselayers of the corresponding unit transistors; an emitter common wiringline connected to the emitter layers of the unit transistors; a via-holethat is disposed at a position overlapping the emitter common wiringline and that extends from the emitter common wiring line to a secondsurface of the substrate, the second surface being opposite to the firstsurface; and a collector common wiring line connected to the collectorlayers of the unit transistors. In the semiconductor device, an inputcapacitor region in which the input capacitive elements are arranged,the emitter common wiring line, a transistor region in which the unittransistors are arranged, and the collector common wiring line arearranged in this order in a second direction intersecting the firstdirection, and base wiring lines that connect the input capacitiveelements to the base layers of the corresponding unit transistorsintersect the emitter common wiring line without physical contact.

The input capacitive elements do not affect the arrangement of thevia-hole. Therefore, the distance from the via-hole to the unittransistors can be shortened. As a result, the emitter resistance can bereduced without increasing the collector resistance. Thus, a decrease inthe output power can be suppressed to realize an improvement in thegain.

A semiconductor device according to the second aspect has theconfiguration of the semiconductor device according to the first aspect,in which the base wiring lines are disposed above the emitter commonwiring line with an insulating film interposed therebetween atintersections of the base wiring lines and the emitter common wiringline.

The arrangement of the via-hole disposed under the emitter common wiringline is not affected by the base wiring lines. Therefore, the degree offreedom of the arrangement of the via-hole increases. As a result, thedistance from the via-hole to the emitter layers of the unit transistorscan be shortened.

A semiconductor device according to the third aspect has theconfiguration of the semiconductor device according to the first orsecond aspect, in which the input capacitive elements each include alower-layer electrode connected to the base wiring line and anupper-layer electrode disposed above the lower-layer electrode with aninsulating film interposed therebetween, and the semiconductor devicefurther includes an input signal wiring line that is disposed in awiring layer located above a wiring layer in which the lower-layerelectrode is disposed and that supplies an input signal to theupper-layer electrode. An input signal is supplied from the input signalwiring line to the base layers of the unit transistors through the inputcapacitive elements and the base wiring lines.

A semiconductor device according to the fourth aspect has theconfiguration of the semiconductor device according to the third aspectand further includes a plurality of resistive elements connected to thecorresponding lower-layer electrodes; and a bias wiring line that isdisposed in the same wiring layer as the lower-layer electrodes and thatsupplies a bias to the base layers of the unit transistors through theresistive elements and the lower-layer electrodes, in which noinsulating film is disposed between a layer in which the resistiveelements are disposed and the layer in which the lower-layer electrodesand the bias wiring line are disposed. Connection can be establishedfrom the lower-layer electrode to the bias wiring line with theresistive element interposed therebetween without a via for connectingthe upper wiring layer to the lower wiring layer.

A semiconductor device according to the fifth aspect has theconfiguration of the semiconductor device according to any one of thefirst to fourth aspects and further includes collector wiring lines thatconnect the collector layers of the unit transistors to the collectorcommon wiring line and that are disposed in a wiring layer located belowthe collector common wiring line; and emitter wiring lines that passabove the collector wiring lines to connect the emitter layers of theunit transistors to the emitter common wiring line. With theconfiguration in which the emitter wiring lines pass above the collectorwiring lines, the emitter wiring lines can be guided from the emitterlayers to the emitter common wiring line while detouring the base wiringlines.

A semiconductor device according to the sixth aspect has theconfiguration of the semiconductor device according to any one of thefirst to fourth aspects and further includes emitter wiring lines thatare disposed in the same wiring layer as the emitter common wiring line,that are formed by a single conductor pattern including the emittercommon wiring line, and that are connected to the emitter layers of theunit transistors, in which the base wiring lines pass above the emitterwiring lines and are connected to the base layers of the correspondingunit transistors. Since the base wiring lines do not affect guiding ofthe emitter wiring lines, the lengths of the emitter wiring linesextending from the emitter layers to the emitter common wiring line canbe reduced.

While preferred embodiments of the disclosure have been described above,it is to be understood that variations and modifications will beapparent to those skilled in the art without departing from the scopeand spirit of the disclosure. The scope of the disclosure, therefore, isto be determined solely by the following claims.

What is claimed is:
 1. A semiconductor device comprising: a plurality ofunit transistors that are arranged on a first surface of a substrate ina first direction and that each include a base layer, an emitter layer,and a collector layer; input capacitive elements arranged so as tocorrespond to the unit transistors and connected to the base layers ofthe corresponding unit transistors; an emitter common wiring lineconnected to the emitter layers of the unit transistors; a via-hole thatis disposed at a position overlapping the emitter common wiring line andthat extends from the emitter common wiring line to a second surface ofthe substrate, the second surface being opposite to the first surface;and a collector common wiring line connected to the collector layers ofthe unit transistors, wherein an input capacitor region in which theinput capacitive elements are arranged, the emitter common wiring line,a transistor region in which the unit transistors are arranged, and thecollector common wiring line are arranged in this order in a seconddirection intersecting the first direction, and base wiring lines thatconnect the input capacitive elements to the base layers of thecorresponding unit transistors intersect the emitter common wiring linewithout physical contact.
 2. The semiconductor device according to claim1, wherein the base wiring lines are disposed above the emitter commonwiring line with an insulating film interposed therebetween atintersections of the base wiring lines and the emitter common wiringline.
 3. The semiconductor device according to claim 1, wherein theinput capacitive elements each include a lower-layer electrode connectedto the base wiring line and an upper-layer electrode disposed above thelower-layer electrode with an insulating film interposed therebetween,and the semiconductor device further comprises an input signal wiringline that is disposed in a wiring layer located above a wiring layer inwhich the lower-layer electrode is disposed and that supplies an inputsignal to the upper-layer electrode.
 4. The semiconductor deviceaccording to claim 3, further comprising: a plurality of resistiveelements connected to the corresponding lower-layer electrodes; and abias wiring line that is disposed in the same wiring layer as thelower-layer electrodes and that supplies a bias to the base layers ofthe unit transistors through the resistive elements and the lower-layerelectrodes, wherein no insulating film is disposed between a layer inwhich the resistive elements are disposed and the layer in which thelower-layer electrodes and the bias wiring line are disposed.
 5. Thesemiconductor device according to claim 1, further comprising: collectorwiring lines that connect the collector layers of the unit transistorsto the collector common wiring line and that are disposed in a wiringlayer located below the collector common wiring line; and emitter wiringlines that pass above the collector wiring lines to connect the emitterlayers of the unit transistors to the emitter common wiring line.
 6. Thesemiconductor device according to claim 1, further comprising: emitterwiring lines that are disposed in the same wiring layer as the emittercommon wiring line, that are formed by a single conductor patternincluding the emitter common wiring line, and that are connected to theemitter layers of the unit transistors, wherein the base wiring linespass above the emitter wiring lines and are connected to the base layersof the corresponding unit transistors.
 7. The semiconductor deviceaccording to claim 2, wherein the input capacitive elements each includea lower-layer electrode connected to the base wiring line and anupper-layer electrode disposed above the lower-layer electrode with aninsulating film interposed therebetween, and the semiconductor devicefurther comprises an input signal wiring line that is disposed in awiring layer located above a wiring layer in which the lower-layerelectrode is disposed and that supplies an input signal to theupper-layer electrode.
 8. The semiconductor device according to claim 7,further comprising: a plurality of resistive elements connected to thecorresponding lower-layer electrodes; and a bias wiring line that isdisposed in the same wiring layer as the lower-layer electrodes and thatsupplies a bias to the base layers of the unit transistors through theresistive elements and the lower-layer electrodes, wherein no insulatingfilm is disposed between a layer in which the resistive elements aredisposed and the layer in which the lower-layer electrodes and the biaswiring line are disposed.
 9. The semiconductor device according to claim2, further comprising: collector wiring lines that connect the collectorlayers of the unit transistors to the collector common wiring line andthat are disposed in a wiring layer located below the collector commonwiring line; and emitter wiring lines that pass above the collectorwiring lines to connect the emitter layers of the unit transistors tothe emitter common wiring line.
 10. The semiconductor device accordingto claim 3, further comprising: collector wiring lines that connect thecollector layers of the unit transistors to the collector common wiringline and that are disposed in a wiring layer located below the collectorcommon wiring line; and emitter wiring lines that pass above thecollector wiring lines to connect the emitter layers of the unittransistors to the emitter common wiring line.
 11. The semiconductordevice according to claim 4, further comprising: collector wiring linesthat connect the collector layers of the unit transistors to thecollector common wiring line and that are disposed in a wiring layerlocated below the collector common wiring line; and emitter wiring linesthat pass above the collector wiring lines to connect the emitter layersof the unit transistors to the emitter common wiring line.
 12. Thesemiconductor device according to claim 7, further comprising: collectorwiring lines that connect the collector layers of the unit transistorsto the collector common wiring line and that are disposed in a wiringlayer located below the collector common wiring line; and emitter wiringlines that pass above the collector wiring lines to connect the emitterlayers of the unit transistors to the emitter common wiring line. 13.The semiconductor device according to claim 8, further comprising:collector wiring lines that connect the collector layers of the unittransistors to the collector common wiring line and that are disposed ina wiring layer located below the collector common wiring line; andemitter wiring lines that pass above the collector wiring lines toconnect the emitter layers of the unit transistors to the emitter commonwiring line.
 14. The semiconductor device according to claim 2, furthercomprising: emitter wiring lines that are disposed in the same wiringlayer as the emitter common wiring line, that are formed by a singleconductor pattern including the emitter common wiring line, and that areconnected to the emitter layers of the unit transistors, wherein thebase wiring lines pass above the emitter wiring lines and are connectedto the base layers of the corresponding unit transistors.
 15. Thesemiconductor device according to claim 3, further comprising: emitterwiring lines that are disposed in the same wiring layer as the emittercommon wiring line, that are formed by a single conductor patternincluding the emitter common wiring line, and that are connected to theemitter layers of the unit transistors, wherein the base wiring linespass above the emitter wiring lines and are connected to the base layersof the corresponding unit transistors.
 16. The semiconductor deviceaccording to claim 4, further comprising: emitter wiring lines that aredisposed in the same wiring layer as the emitter common wiring line,that are formed by a single conductor pattern including the emittercommon wiring line, and that are connected to the emitter layers of theunit transistors, wherein the base wiring lines pass above the emitterwiring lines and are connected to the base layers of the correspondingunit transistors.
 17. The semiconductor device according to claim 5,further comprising: emitter wiring lines that are disposed in the samewiring layer as the emitter common wiring line, that are formed by asingle conductor pattern including the emitter common wiring line, andthat are connected to the emitter layers of the unit transistors,wherein the base wiring lines pass above the emitter wiring lines andare connected to the base layers of the corresponding unit transistors.18. The semiconductor device according to claim 7, further comprising:emitter wiring lines that are disposed in the same wiring layer as theemitter common wiring line, that are formed by a single conductorpattern including the emitter common wiring line, and that are connectedto the emitter layers of the unit transistors, wherein the base wiringlines pass above the emitter wiring lines and are connected to the baselayers of the corresponding unit transistors.
 19. The semiconductordevice according to claim 8, further comprising: emitter wiring linesthat are disposed in the same wiring layer as the emitter common wiringline, that are formed by a single conductor pattern including theemitter common wiring line, and that are connected to the emitter layersof the unit transistors, wherein the base wiring lines pass above theemitter wiring lines and are connected to the base layers of thecorresponding unit transistors.
 20. The semiconductor device accordingto claim 9, further comprising: emitter wiring lines that are disposedin the same wiring layer as the emitter common wiring line, that areformed by a single conductor pattern including the emitter common wiringline, and that are connected to the emitter layers of the unittransistors, wherein the base wiring lines pass above the emitter wiringlines and are connected to the base layers of the corresponding unittransistors.